| 1. | To achieve the required bump heights , the solder paste is over - printed onto the wafer bond pads
为了获得要求的凸起高度，锡膏在晶片焊盘过焊。 |
| 2. | An equipment for vacuum wafer bonding was developed based on the wafer bonding technology
摘要基于圆片键合技术，设计了一种在真空条件下进行圆片键合的工艺设备。 |
| 3. | Abstract : this paper introduces the technology of solid membrane transfer by wafer bonding and its applications
文摘:阐述了利用键合方法转移薄膜材料的技术及其应用。 |
| 4. | Our analysis shows that the criterion for self - propagating wafer bonding is relevant to the dimensionless parameter
分析结果表明，晶片直接键合的条件与无量纲参数有关。 |
| 5. | Over coming lattice and orientation mismatch , direct wafer bonding allows fabricating of structures and devices which can ? get through hetero - epitaxial growth
利用键合技术可以集成晶格或晶向失配的材料，制造传统外延生长技术不能制造的结构和器件。 |
| 6. | Direct wafer bonding is a new process of material integrating and has received tremendous attention in the research of optoelectronics and microelectronics field
摘要晶片直接键合技术是材料集成的一项新工艺，是近年来集成光电子领域的研究热点之一。 |
| 7. | Research advances and applications of direct wafer bonding of - v compound semiconductors in optoelectronics device and its integration are generalized
概括介绍了近年来- v族化合物半导体材料键合技术的最新研究进展及其在光电子器件和集成领域的应用。 |
| 8. | The criterion of microroughness for self - propagating wafer bonding is studied according to jkr contact theory , where the microroughness model is based on a sinusoidal distribution for gap height and gap length
摘要根据jkr接触理论，推导出晶片直接键合时晶片接触表面粗糙度需要满足的条件，其中晶片接触表面粗糙度的描述是基于缝隙长度和缝隙高度的正弦波模型。 |
| 9. | Using the infrared transmission theory , which is to say that the bonding part of the sample can make the light pass , and the un - bonding part of the sample will block the light , at the same time , the unique method of cold lamp - house is used to manufacture the instrument of testing the wafer bonding quality in order to select the high quality one for the next technical research
摘要利用红外透射原理，即根据键合晶片中键合部分可以透光而未键合部分几乎不能透光的原理，同时采用冷光源的独特方法构建了键合质量测试平台以用于初步筛选符合下一步工艺探索的高质量键合晶片。 |
